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TSM2N7000
60V N-Channel MOSFET
SOT-92
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)()
60 5 @ VGS = 10V
ID (mA)
500
Features
Fast Switching Speed Low Input and Output Leakage
Block Diagram
Application
Direct Logic-Level Interface: TTL/CMOS Solid-State Relays
Ordering Information
Part No.
TSM2N7000CT B0 TSM2N7000CT A3
Package
TO-92 TO-92
Packing
1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
60 20 200 500 500 350 280 +150 -55 to +150
Unit
V V mA mA mA mW
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec.
Symbol
TL RJA
Limit
10 357
Unit
S
o
C/W
1/4
Version: A07
TSM2N7000
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 10A VDS = VGS, ID = 1mA VGS = 15V, VDS = 0V VDS = 48V, VGS = 0V VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA VDS = 15V, ID = 300mA IS = 200mA, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Ciss Coss Crss tr tf
Min
60 0.8 ------------
Typ
-----7.5 320 1.3 60 25 5 10 10
Max
-3.0 10 1.0 5.0 --1.5 -----
Unit
V V nA A mS V
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Turn-On Rise Time Turn-Off Fall Time
VDD = 15V, RL = 30, ID = 500mA,
nS --
VGEN = 10V, RG = 25 Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
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Version: A07
TSM2N7000
60V N-Channel MOSFET
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017
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Version: A07
TSM2N7000
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A07

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